? low drive voltage: 2.5 v drive ? halogen-free / rohs compliant ? packaging 1. gate FK3303010L embossed type (thermo-compression sealing): 2. source 3. drain ? absolute maximum ratings y ta = 25 c 1. gate 2. source 3. drain publication date: october 2012 ver. eed internal connection pin name drain-source voltage vds 100 drain current drain current(pulsed) c FK3303010L panasonic sssmini3-f2-b jeita sc-105aa 1 parameter rating unit sot-723 30 v symbol FK3303010L silicon n-channel mosfet for switching fk350301 in sssmini3 type package unit: mm 10 000 pcs / reel (standard) (eu rohs / ul-94 v-0 / msl:level 1 compliant) ? features ? marking symbol: x1 code vgs gate-source voltage total power dissipation pd v 100 12 200 ma ma mw id idp channel temperature tch 150 +150 c storage temperature tstg -55 to 2 1 3 2 1 3
? electrical characteristics ta = 25 c 3 c drain-source breakdown voltage note: measuring methods are based on japanese industrial standard jis c 7030 measuring methods for transistors. *1 ton , toff measurement circuit ver. eed pf pf ms drain-source on-state resistance pf 23 12 id = 10 ma, vgs = 4.0 v igss gate-source threshold voltage vth forward transfer admittance |yfs| unit parameter min typ max symbol conditions 30 vgs = 10 v, vds = 0 v vdss id = 1ma, vgs = 0 v gate-source leakage current v zero gate voltage drain current idss vds = 30 v, vgs = 0 v 1.0 a a v id = 10 ma, vgs = 2.5 v 3 6 id = 1.0 a, vds = 3.0 v 0.5 1.0 10 7 FK3303010L id = 10 ma, vds = 3.0 v 20 55 1.5 2 3 reverse transfer capacitance crss turn-on delay time *1 ton input capacitance ciss output capacitance coss rds(on)1 rds(on)2 vds = 3 v, vgs = 0 v, f = 1 mhz ns turn-off delay time *1 toff 100 ns rl=300 100 vdd = 3 v, vgs = 0 v to 3 v rl=300 vdd = 3 v, vgs = 3 v to 0 v
*1 ton , toff measurement circuit ver. eed FK3303010L 3 vin 50 vdd = 3 v id = 10 ma rl = 300 vout s g d 10 % 90 % 10 % 90 % vgs vout ton toff vin 0 v 3 v pw = 10 s d.c. 1 %
ver. eed FK3303010L capacitance - vds 4 vds - vgs rds(on) - id id - vds id - vgs 0 0.05 0.1 0 0.2 0.4 0.6 0.8 1 1.2 drain-source voltage vds (v) drain current id (a) vgs = 4.0 v 2.5 v 2.0 v 1.5 v 1.0e-06 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 0123 gate-source voltage vgs (v) drain current id (a) ta = 85 c -30 c 25 c 0 0.04 0.08 0.12 0.16 0.2 0123456 gate-source voltage vgs (v) drain-source voltage vds (v) id = 20.0 ma 10.0 ma 5.0 ma 0.1 1 10 1 10 100 drain current id (ma) drain-source on-state resistance rds(on) ( ) 4.0 v vgs = 2.5 v 1 10 100 0.1 1 10 100 drain-source voltage vds (v) capacitance c (pf) ciss coss crss
ver. eed rth -tsw FK3303010L safe operating area 5 vth - ta rds(on) - ta pd - ta 0 0.5 1 1.5 2 2.5 -50 0 50 100 150 temperature ta ( c) gate-source threshold voltage vth (v) 0 2 4 -50 0 50 100 150 200 temperature ta ( c) drain-source on-state resistance rds(on) ( ) 4.0 v vgs = 2.5 v 0 0.05 0.1 0.15 0 50 100 150 temperature ta ( c) total power dissipation pd (w) 0.0001 0.001 0.01 0.1 1 10 0.01 0.1 1 10 100 drain-source voltage vds (v) drain current id (a) idp = 0.2 a operation in this area is limited by rds(on) ta = 25 c, glass epoxy board (25.4 25.4 t0.8 mm) coated with copper foil, which has more than 300 mm 2 . 100 ms 1 s dc 1 ms 10 ms 1 10 100 1000 0.0001 0.001 0.01 0.1 1 10 100 1000 pulse width tsw (s) thermal resistance rth ( c/w)
ver. eed 6 FK3303010L unit: mm sssmini3-f2-b ? land pattern ( reference ) ( unit: mm )
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